Metals and Alloys
1. A study on vacancy-type defects in the electroless Cu measured with a monoenergetic positron beam
Kimihiro Yamanaka, Akira Uedono
Scripta Materialia, In Press, Corrected Proof, February 2009.
2. Ion Beam Analysis of the Annealing Behavior of Helium in Ti Films
He Zhi-Jiang, Shi Li-Qun, Liu Chao-Zhuo, Zhang Lei, Lu Yong-Fang and Zhang Bin
Chinese Phys. Lett. 26, 042501 (2009).
3. Studies of Positrons Trapped at Quantum-Dot Like Particles Embedded in Metal Surfaces
N. G. Fazleev, M. P. Nadesalingam, and A. H. Weiss
AIP Conf. Proc. 1099, 956 (2009).
4. Studies of Oxidation of the Cu(100) Surface Using Low Energy Positrons
N. G. Fazleev, W. B. Maddox, M. Nadesalingam, K. Rajeshwar, and A. H. Weiss
AIP Conf. Proc. 1099, 952 (2009).
5. Depth-resolved positron annihilation studies of argon nanobubbles in aluminum
R. S. Dhaka, K. Gururaj, S. Abhaya, G. Amarendra, S. Amirthapandian, B. K. Panigrahi, K. G. M. Nair, N. P. Lalla, and S. R. Barman
J. Appl. Phys. 105, 054304 (2009).
6. Positron depth profiling of the structural and electronic structure transformations of hydrogenated Mg-based thin films
S. W. H. Eijt, R. Kind, S. Singh, H. Schut, W. J. Legerstee, R. W. A. Hendrikx, V. L. Svetchnikov, R. J. Westerwaal, and B. Dam
J. Appl. Phys. 105, 043514 (2009).
7. Hydrogen-vacancy complexes in electron-irradiated niobium
Jakub �ek, Ivan Proch�zka, Stanislav Dani�, Gerhard Brauer, Wolfgang Anwand, Ryota Gemma, Eugen Nikitin, Reiner Kirchheim, Astrid Pundt, and Rinat K. Islamgaliev
Phys. Rev. B 79, 054108 (2009).
8. Thermal vacancy formation in Co-based Heusler-type alloys Co2MnZ (Z = Si, Ge, Sn)
M. Kogachi, S. Kikuchi, T. Fujiwara, F. Hori
Journal of Alloys and Compounds, In Press, Corrected Proof, February 2009.
9. The effect of alloying elements on the vacancy defect evolution in electron-irradiated austenitic Fe�Ni alloys studied by positron annihilation
A.P. Druzhkov, D.A. Perminov, A.E. Davletshin
Journal of Nuclear Materials 384, 56 (2009).
10. Vacancy�solute interactions during multiple-step ageing of an Al�Cu�Mg�Ag alloy
R. Ferragut, A. Dupasquier, C.E. Macchi, A. Somoza, R.N. Lumley, I.J. Polmear
Scripta Materialia 60, 137 (2009).
11. On Young's modulus and the interfacial free volume in nanostructured Ni�P
Y. Zhou, S. Van Petegem, D. Segers, U. Erb, K.T. Aust, G. Palumbo
Materials Science and Engineering: A, In Press, Corrected Proof, January 2009.
12. Fermi surfaces of rare-earth nickel borocarbides
S B Dugdale, C Utfeld, I Wilkinson, J Laverock, Zs Major, M A Alam and P C Canfield
Supercond. Sci. Technol. 22, 014002 (2009).
13. Positron annihilation study of the electronic structure of URu2Si2: Fermi surface and hidden order parameter
M. Biasini, J. Rusz, and A. P. Mills, Jr.
Phys. Rev. B 79, 085115 (2009).
Reactor materials
1. Positron annihilation study of neutron irradiated model alloys and of a reactor pressure vessel steel
M. Lambrecht, A. Almazouzi
Journal of Nuclear Materials 385, 334 (2009).
2. Void swelling in ion irradiated (15Ni-14Cr), Ti-modified stainless steel: A study using positron annihilation and step height measurements
C. David, B.K. Panigrahi, G. Amarendra, S. Abhaya, S. Balaji, A.K. Balamurugan, K.G.M. Nair, B. Viswanathan, C.S. Sundar, Baldev Raj
Surface and Coatings Technology, In Press, Accepted Manuscript, February 2009.
3. Defect recovery in proton irradiated Ti-modified stainless steel probed by positron annihilation
J. Arunkumar, S. Abhaya, R. Rajaraman, G. Amarendra, K.G.M. Nair, C.S. Sundar, Baldev Raj
Journal of Nuclear Materials 384, 245 (2009).
4. Positron Annihilation Energy and Lifetime Spectroscopy Studies for Radiation Defects in Stainless Steel
L. Tchelidze, D. P. Wells, and S. A. Maloy
AIP Conf. Proc. 1099, 985 (2009).
5. Doppler Broadening Analysis of Steel Specimens Using Accelerator Based In Situ Pair Production
V. Makarashvili, D. P. Wells, and A. K. Roy
AIP Conf. Proc. 1099, 900 (2009).
Nuclear Instrumentation
1. Detection efficiency calculation for photons, electrons and positrons in a well detector. Part I: Analytical model
S. Pomm�
Nucl.� Instrum. and Meth. A In Press, Uncorrected Proof, March 2009.
2. Advanced fitting algorithms for analysing positron annihilation lifetime spectra
Carlos Pascual-Izarra, Aurelia W. Dong, Steven J. Pas, Anita J. Hill, Ben J. Boyd, Calum J. Drummond
Nucl.� Instrum. and Meth. A In Press, Corrected Proof, February 2009.
Semiconductors
1. He implantation induced nanovoids in crystalline Si
S. Kilpel�inen, K. Kuitunen, J. Slotte, F. Tuomisto, E. Bruno, S. Mirabella, F. Priolo Materials Science and Engineering: B, In Press, Corrected Proof, January 2009.
2. Vacancy engineering by He induced nanovoids in crystalline Si
S Kilpel�inen, K Kuitunen, F Tuomisto, J Slotte, E Bruno, S Mirabella and F Priolo
Semicond. Sci. Technol. 24, 015005 (2009).
3. The effects of fast neutron irradiation on oxygen in Czochralski silicon
Chen Gui-Feng, Yan Wen-Bo, Chen Hong-Jian, Li Xing-Hua and Li Yang-Xian
Chinese Phys. B 18, 293 (2009).
4. Evidence for a vacancy�phosphorus�oxygen complex in silicon
S Dannefaer, G Suppes and V Avalos
J. Phys.: Condens. Matter 21, 015802 (2009).
5. The Effects of Surface Reconstruction and Electron-Positron Correlation on the Annihilation Characteristics of Positrons Trapped at Semiconductor Surfaces
N. G. Fazleev, E. Jung, and A. H. Weiss
AIP Conf. Proc. 1099, 932 (2009).
Compound semiconductors
1. Positron annihilation of vacancy-type defects in neutron-irradiated 4H�SiC
Q. Xu, T. Yoshiie, M. Okada
Journal of Nuclear Materials, In Press, Corrected Proof, January 2009.
2. Relationship between defects and optical properties in Er-doped GaN
Shaoqiang Chen, Akira Uedono, Jongwon Seo, Junji Sawahata, Katsuhiro Akimoto
Journal of Crystal Growth, In Press, Corrected Proof, January 2009.
3. Point defects in group-III nitride semiconductors studied by positron annihilation
A. Uedono, S. Ishibashi, T. Ohdaira, R. Suzuki
Journal of Crystal Growth, In Press, Corrected Proof, January 2009.
4. Mechanisms of ion-induced GaN thin layer splitting
O. Moutanabbir, Y.J. Chabal, M. Chicoine, S. Christiansen, R. Krause-Rehberg, F. Schiettekatte, R. Scholz, O. Seitz, S. Senz, F. S��kraut, U. G�sele
Nucl.� Instrum. and Meth. B In Press, Corrected Proof, January 2009.
5. Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects
X. L. Yang, W. X. Zhu, C. D. Wang, H. Fang, T. J. Yu, Z. J. Yang, G. Y. Zhang, X. B. Qin, R. S. Yu, and B. Y. Wang
Appl. Phys. Lett. 94, 151907 (2009).
6. Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy
M. J. Wang, L. Yuan, C. C. Cheng, C. D. Beling, and K. J. Chen
Appl. Phys. Lett. 94, 061910 (2009).
7. Electronic coupling of colloidal CdSe nanocrystals monitored by thin-film positron-electron momentum density methods
S. W. H. Eijt, P. E. Mijnarends, L. C. van Schaarenburg, A. J. Houtepen, D. Vanmaekelbergh, B. Barbiellini, and A. Bansil
Appl. Phys. Lett. 94, 091908 (2009).
8. Vacancy-type defects in Mg-doped InN probed by means of positron annihilation
A. Uedono, H. Nakamori, K. Narita, J. Suzuki, X. Wang, S.-B. Che, Y. Ishitani, A. Yoshikawa, and S. Ishibashi
J. Appl. Phys. 105, 054507 (2009).
9. Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
A. Uedono et al.
J. Appl. Phys. 105, 054501 (2009).
Glasses and Insulators
1. Defect configurations in Ge�S chalcogenide glasses studied by Raman scattering and positron annihilation technique
Changgui Lin, Haizheng Tao, Zhu Wang, Bing Wang, Haochun Zang, Xiaolin Zheng, Xiujian Zhao
Journal of Non-Crystalline Solids 355, 438 (2009).
2. Cooperative rearranging region size and free volume in As�Se glasses
A Saiter, J-M Saiter, R Golovchak, M Shpotyuk and O Shpotyuk
J. Phys.: Condens. Matter 21, 075105 (2009).�
3. The structural properties of B�O codoped diamond films
Xiao Jun Hu, Yao Gen Shen, Xiao Peng Hao, Bao Yi Wang
Diamond and Related Materials 18, 210 (2009).
4. Dielectric characteristics and positron annihilation study of Eu2O3-doped CaCu3Ti4O12 ceramics
Tao Li, Yuncai Xue, Zhenping Chen, Fanggao Chang
Materials Science and Engineering: B 158, 58 (2009).
5. Lattice relaxation at V−, NV−, and NVN− defects in diamond investigated by positron annihilation
S Dannefaer
J. Phys.: Condens. Matter 21, 175412� (2009).
Oxides
1. Role of defects in tailoring structural, electrical and optical properties of ZnO
Sreetama Dutta, S. Chattopadhyay, A. Sarkar, Mahuya Chakrabarti, D. Sanyal, D. Jana
Progress in Materials Science 54, 89 (2009).
2. Identification of Zn-vacancy�hydrogen complexes in ZnO single crystals: A challenge to positron annihilation spectroscopy
G. Brauer et al.
Phys. Rev. B 79, 115212 (2009).
3. Correlation Between Optoelectronic and Positron Lifetime Properties in As-received and Plasma-treated ZnO Nanopowders
R. M. Peters, J. A. Paramo, C. A. Quarles, and Y. M. Strzhemechny
AIP Conf. Proc. 1099, 965 (2009).
4. Positron annihilation and X-ray diffraction studies on tin oxide thin films
K. Prabakar, S. Abhaya, R. Krishnan, S. Kalavathi, S. Dash, J. Jayapandian,�������������������� G. Amarendra
Nucl.� Instrum. and Meth. B, In Press, Corrected Proof, February 2009.
5. Identification of pore size in porous SiO2 thin film by positron annihilation
Zhang Zhe, Qin Xiu-Bo, Wang Dan-Ni, Yu Run-Sheng, Wang Qiao-Zhan, Ma Yan-Yun and Wang Bao-Yi
Chinese Phys. C 33, 156 (2009).
6. Defects in Si-Rich SiO2 Films Prepared by Radio-Frequency Magnetron Co-sputtering Using Variable Energy positron annihilation Spectroscopy
Hao Xiao-Peng, Zhou Chun-Lan, Wang Bao-Yi and Wei Long
Chinese Phys. Lett. 26, 046101 (2009).
7. Positron annihilation spectroscopy and transport properties of double perovskite compounds Sr2−xGdxFeMoO6
Y. C. Hu, P. F. Wang, Bin Lv, Qing Ji, X. S. Wu, and Qingfeng Lu
J. Appl. Phys. 105, 07D726 (2009).
8. Photoluminescence and positron annihilation spectroscopy of MeV Si+ ion-irradiated SiyO1−y:Er (y1/3) thin films
D. E. Blakie, O. H. Y. Zalloum, J. Wojcik, E. A. Irving, A. P. Knights, P. Mascher, and P. J. Simpson
J. Appl. Phys. 105, 053517 (2009).
9. Photoluminescence and positron annihilation spectroscopy investigation of (Ge, Er) codoped Si oxides deposited by magnetron sputtering
C. L. Heng, E. Chelomentsev, Z. L. Peng, P. Mascher, and P. J. Simpson
J. Appl. Phys. 105, 014312 (2009).
10. Vacancy defect positron lifetimes in strontium titanate
R. A. Mackie, S. Singh, J. Laverock, S. B. Dugdale, and D. J. Keeble
Phys. Rev. B 79, 014102 (2009).
Polymers
1. The effect of electron irradiation on high density polyethylene: Positron annihilation lifetime spectroscopy, differential scanning calorimetry and X-ray scattering studies
A. Zaydouri, M. Grivet
Radiation Physics and Chemistry, In Press, Accepted Manuscript, March 2009.
2. Defect study on Polyaniline by positron annihilation spectrometry
Koan Sik Joo, Ki Yong Nam, Sang June Jeon, Seung Hwa Beack, Han Jun Yang
Applied Radiation and Isotopes, In Press, Accepted Manuscript, February 2009.
3. A free-volume study on the phase modifications brought out by e-beam and microwave irradiations in PP/NBR and PVC/SAN blends
J.M. Raj, C. Ranganathaiah
Polymer Degradation and Stability 94, 397 (2009).
4. Investigation of interfacial interaction and structural transition for epoxy/nanotube composites by positron annihilation lifetime spectroscopy
Wei Zhou, Junjun Wang, Zhenli Gong, Jing Gong, Ning Qi, and Bo Wang
Appl. Phys. Lett. 94, 021904 (2009).
Superconductivity
1. Anisotropic and multiband pairing: from borides to multicomponent superconductivity
James Annett, Feodor Kusmartsev and Antonio Bianconi
Supercond. Sci. Technol. 22, 010301 (2009).
Theoretical studies
1. Theoretical studies of positron annihilation in YN and ScN
N. Amrane
Materials Chemistry and Physics 114, 283 (2009).
Developmental works
1. Status and Perspectives for a Slow Positron Beam Facility at the HH�NIPNE Bucharest
Mihai Straticiuc et al.
AIP Conf. Proc. 1099, 960 (2009).
2. Defect Density Mapping of Shot Peened Materials Using Positron Annihilation Spectroscopy
Marcus A. Gagliardi and Alan W. Hunt
AIP Conf. Proc. 1099, 857 (2009)
Positronium physics
1. Interaction of positronium atoms, with paramagnetic molecules, measured by perturbed angular distribution in 3γ annihilation decay
Eugeniu Ivanov, Ion Vata, Stefan Teodorian, Ion Rusen, Nitisor Stefan
Nucl.� Instrum. and Meth. B 267, 347 (2009).